The effect of plasma power on the properties of low‐temperature silicon nitride deposited by RPALD for a gate spacer

E-ISSN： 1862-6319|212|12|2785-2790

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.12, 2015-12, pp. : 2785-2790

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