Publisher: Trans Tech Publications
E-ISSN: 1662-9779|2015|242|120-125
ISSN: 1012-0394
Source: Solid State Phenomena, Vol.2015, Iss.242, 2016-02, pp. : 120-125
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon
Solid State Phenomena, Vol. 2015, Iss. 242, 2016-02 ,pp. :
Experimental Proof of the Slow Light-Induced Degradation Component in Compensated n-Type Silicon
Solid State Phenomena, Vol. 2015, Iss. 242, 2016-02 ,pp. :
Segregation Gettering Model for Nickel in p/p+ Silicon Wafers
Solid State Phenomena, Vol. 2015, Iss. 242, 2016-02 ,pp. :
Investigation of Parasitic Edge Recombination in High-Lifetime Oxidized n-Si
Solid State Phenomena, Vol. 2015, Iss. 242, 2016-02 ,pp. :