Electrical Characterization of Defects Introduced in n-Type N-Doped 4H-SiC during Electron Beam Exposure

E-ISSN： 1662-9779|2015|242|427-433

ISSN： 1012-0394

Source： Solid State Phenomena, Vol.2015, Iss.242, 2016-02, pp. : 427-433

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