Publisher： Cambridge University Press
E-ISSN： 1759-0795|4|3|267-274
ISSN： 1759-0787
Source： International Journal of Microwave and Wireless Technologies, Vol.4, Iss.3, 2012-06, pp. : 267-274
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using AlGaN/GaN dual-gate High electron mobility transistors (HEMTs) with a gate-length of 100 nm to achieve a high gain per stage and high output power. A large-signal model was extracted for the dual-gate HEMT based on the state-space approach. For the fabricated dual-stage amplifier a continuous-wave saturatedoutput power of up to 24.8 dBm (0.84 W/mm) was measured at 63 GHz for 20 V drain bias. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.
Related content
Access to resources
Recommend
Broadband AlGaN/GaN MMIC amplifier
International Journal of Microwave and Wireless Technologies, Vol. 3, Iss. 4, 2011-08 ,pp. :