A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

Publisher： Cambridge University Press

E-ISSN： 1759-0795|4|3|267-274

ISSN： 1759-0787

Source： International Journal of Microwave and Wireless Technologies, Vol.4, Iss.3, 2012-06, pp. : 267-274

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