Publisher： Cambridge University Press
E-ISSN： 1759-0795|2|1|51-61
ISSN： 1759-0787
Source： International Journal of Microwave and Wireless Technologies, Vol.2, Iss.1, 2010-02, pp. : 51-61
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Abstract
The present paper presents the transistor modeling work achieved in the GaN European project KorriGaN (“Key Organisation for Research in Integrated Circuits in GaN technology”). The KorriGaN project (2005–09) has released 29 GaN circuits such as high-power amplifiers (HPAs), low-noise amplifiers (LNAs), and switches. Modeling is one of the main key to reach successful designs. Therefore, nonlinear models of European GaN HEMT models have been developed. This work deals with characterization tools such as pulsed IV, pulsed [
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International Journal of Microwave and Wireless Technologies, Vol. 2, Iss. 1, 2010-02 ,pp. :