Wrinkling of a Debonded Initially Compressed Si1−XGex Film

Publisher： Cambridge University Press

E-ISSN： 1811-8216|21|3|131-135

ISSN： 1727-7191

Source： Journal of Mechanics, Vol.21, Iss.3, 2005-09, pp. : 131-135

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

High mobility Si1-xGex PMOS transistors to 5K

By  

Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. : C6-69-C6-74

Edp Sciences

Access to resources Recommend Favorite

Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

By  

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-57-Pr3-60

Edp Sciences

Access to resources Recommend Favorite

Investigation of the Substrate/Epitaxial Interface of Si/Si1-xGex Layers Grown by LPCVD

By  

Le Journal de Physique IV, Vol. 05, Iss. C5, 1995-06 ,pp. : C5-895-C5-903

Edp Sciences

Access to resources Recommend Favorite

Measurement of the bandgap narrowing in the base of Si homojunction and Si/Si1-xGex heterojunction bipolar transistors from the temperature dependence of the collector current

By  

Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. : C6-123-C6-126

Edp Sciences

Access to resources Recommend Favorite

Shape transformation of Si1−xGex structures on ultra clean Si(5 5 7) and Si(5 5 12) surfaces

By  

Journal of Physics: Conference Series , Vol. 326, Iss. 1, 2011-11 ,pp. : 153-156

IOP Publishing

Access to resources Recommend Favorite