Author: Hamad Hassan
Publisher: Edp Sciences
E-ISSN: 1286-0050|72|2|20101-20101
ISSN: 1286-0042
Source: EPJ Applied Physics (The), Vol.72, Iss.2, 2015-10, pp. : 20101-20101
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
High Power Self-Aligned, Trench-Implanted 4H-SiC JFETs
E3S Web of conferences, Vol. 16, Iss. issue, 2017-05 ,pp. :
Impact ionization coefficients of 4H- and 6H-SiC
By Sun C.C. You A.H. Wong E.K.
EPJ Applied Physics (The), Vol. 60, Iss. 1, 2012-10 ,pp. :
Stacking faults in heavily nitrogen doped 4H-SiC
By Irmscher K. Doerschel J. Rost H. -J. Schulz D. Siche D. Nerding M. Strunk H. P.
EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. :
Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers
EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. :
Improvements in Realizing 4H-SiC Thermal Neutron Detectors
By Issa F.
EPJ Web of Conference, Vol. 106, Iss. issue, 2016-02 ,pp. :