Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe₂ Schottky diodes

E-ISSN： 1286-0050|60|1|10104-10104

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.60, Iss.1, 2012-10, pp. : 10104-10104

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