Electrical characterization of Si doped AlN films synthesized by pulsed laser deposition

Author： Simeonov Simeon Bakalova Silvia Szekeres Anna Minkov Ivaylo Socol Gabriel Ristoscu Carmen Mihailescu Ion

E-ISSN： 1286-0050|70|1|10102-10102

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.70, Iss.1, 2015-04, pp. : 10102-10102

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Abstract

The electrical properties of thin AlN films doped with Si (AlN:Si) have been investigated. The films were synthesized on Si substrates at 800 °C by pulsed laser deposition in low-pressure nitrogen ambient. The AlN:Si films exhibit non-ohmic I-V characteristics and the current through these films is controlled by space charge limited current. The C-V dependence of metal-insulator-silicon (MIS) structures with AlN:Si films exhibits an excess capacitance around zero bias voltage. This excess capacitance indicates the presence of deep acceptor levels situated at the boundaries of adjacent grains in the AlN:Si films. The Si donor density in the AlN:Si films, estimated from the 1 MHz C-V characteristics, is of the order of 10¹⁸ cm⁻³. The impedance measurements of these AlN:Si structures at different test voltage frequencies reveal that the charge transport mechanism is dominated by either thermally-activated hopping or electron tunneling from occupied to nearest unoccupied deep levels.