The characteristic parameters of initiating defects in HfO2/SiO2 high-reflector multilayer thin film at wavelength of 1064 nm*

Author： Li Xiao   Li Baohe   Shao Jianda  

Publisher： Edp Sciences

E-ISSN： 1286-0050|67|3|30301-30301

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.67, Iss.3, 2014-08, pp. : 30301-30301

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS

By  

MATEC Web of conference, Vol. 78, Iss. issue, 2016-10 ,pp. : 01019-01019

Edp Sciences

Access to resources Recommend Favorite

XPS and cathodoluminescence studies of HfO2, Sc2O3 and (HfO2)1-x(Sc2O3)x films

By Kaichev Vasily V.   Ivanova Ekaterina V.   Zamoryanskaya Maria V.   Smirnova Tamara P.   Yakovkina Lubov V.   Gritsenko Vladimir A.  

EPJ Applied Physics (The), Vol. 64, Iss. 1, 2013-10 ,pp. : 10302-10302

Edp Sciences

Access to resources Recommend Favorite

Molecular dynamics simulation of amorphous SiO2 thin films

By Thi Nhu Tranh Duong   Van Hoang Vo  

EPJ Applied Physics (The), Vol. 70, Iss. 1, 2015-04 ,pp. : 10302-10302

Edp Sciences

Access to resources Recommend Favorite

Passivation of HfO2/Ge interface with YON fabricated by different approaches

By  

MATEC Web of conference, Vol. 104, Iss. issue, 2017-04 ,pp. : 01006-01006

Edp Sciences

Access to resources Recommend Favorite

Synthesis, and Characteristic Luminescence of Core-Shell SiO2@Eu(MABA-Si)·(phen) Microspheres

By Ma Yang-Yang  

MATEC Web of conference, Vol. 142, Iss. issue, 2018-01 ,pp. : 04002-04002

Edp Sciences

Access to resources Recommend Favorite