Barrier height inhomogeneities in Cu-nMoSe₂ Schottky diode

By Sumesh C.K.   Patel K.D.   Pathak V.M.   Srivastav R.  

EPJ Applied Physics (The), Vol. 56, Iss. 1, 2011-09 ,pp. : 10103-10103

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Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

By Gassoumi M.   Saadaoui S.   Ben Salem M.M.   Gaquiere C.   Maaref H.  

EPJ Applied Physics (The), Vol. 55, Iss. 3, 2011-08 ,pp. : 30101-30101

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Preparation and characterization of Au/n-GaSe₄/p-Si/Al Schottky-type thin film heterojunctions

By El-Nahass M.M.   Zedan I.T.   Atta A.A.  

EPJ Applied Physics (The), Vol. 59, Iss. 2, 2012-08 ,pp. : 20101-20101

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Effect of Schottky-ohmic separation length on the ac properties of planar Schottky barrier diode

By Banerjee Abhijit   Chattopadhyay Projnan  

EPJ Applied Physics (The), Vol. 80, Iss. 2, 2017-10 ,pp. : 20101-20101

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Determination of the conduction mechanism and extraction of diode parameters of Au/PANI-TiO₂/Al Schottky diode

By Amrollahi Bioki Hojjat  

EPJ Applied Physics (The), Vol. 62, Iss. 2, 2013-04 ,pp. : 20201-20201

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