SiC-VJFETs power switching devices: an improved model and parameter optimization technique

Author: Ben Salah T.   Lahbib Y.   Morel H.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|48|3|30305-30305

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.48, Iss.3, 2009-10, pp. : 30305-30305

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Abstract