Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT

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Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements

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Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

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Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates

By Ilgaz A.   Gökden S.   Tülek R.   Teke A.   Özçelik S.   Özbay E.  

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AlGaN/GaN MOS-HFETs based on InGaN/GaN MQW structures with Ta₂O₅ dielectric

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