Nucleation and growth of silicon on ceramic substrates by RTCVD at atmospheric pressure

Publisher： Edp Sciences

E-ISSN： 1764-7177|11|PR3|Pr3-301-Pr3-306

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.11, Iss.PR3, 2001-08, pp. : Pr3-301-Pr3-306

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Growth of silicon oxynitride films by atmospheric pressure plasma jet

By Zhang Xueqiang   Ptasinska Sylwia  

Journal of Physics D: Applied Physics, Vol. 47, Iss. 14, 2014-04 ,pp. : 145202-145210

IOP Publishing

Access to resources Recommend Favorite

NUCLEATION AND GROWTH IN TiN CVD ON GRAPHITE SUBSTRATES

By  

Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. : C2-217-C2-224

Edp Sciences

Access to resources Recommend Favorite

Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure

By  

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-221-Pr8-228

Edp Sciences

Access to resources Recommend Favorite

Nucleation behavior during the first stages of SiC growth on different substrates

By  

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-1069-Pr8-1074

Edp Sciences

Access to resources Recommend Favorite

Atmospheric pressure plasma polymerization of 1,3-butadiene for hydrophobic finishing of textile substrates

By  

Journal of Physics: Conference Series , Vol. 208, Iss. 1, 2010-02 ,pp. : 774-780

IOP Publishing

Access to resources Recommend Favorite