Publisher： Edp Sciences
E-ISSN： 1764-7177|01|C6|C6-75-C6-76
ISSN： 1155-4339
Source： Le Journal de Physique IV, Vol.01, Iss.C6, 1991-12, pp. : C6-75-C6-76
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
TEM INVESTIGATION OF COPPER PRECIPITATION AT GRAIN BOUNDARIES IN SILICON
Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. :
Access to resources
Recommend
TEM INVESTIGATION OF GRAIN BOUNDARIES IN POLYCRYSTALLINE SILICON
Le Journal de Physique Colloques, Vol. 43, Iss. C1, 1982-10 ,pp. :
GRAIN BOUNDARIES ANALYSIS IN POLYCRYSTALLINE SILICON BY TEM
Le Journal de Physique Colloques, Vol. 43, Iss. C1, 1982-10 ,pp. :
ATOMIC AND ELECTRON STRUCTURE OF GRAIN BOUNDARIES IN SILICON
Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. :
On the origin of the electrical activity in silicon grain boundaries
Revue de Physique Appliquée (Paris), Vol. 22, Iss. 7, 1987-07 ,pp. :