Publisher: Edp Sciences
E-ISSN: 0035-1687|22|7|613-621
ISSN: 0035-1687
Source: Revue de Physique Appliquée (Paris), Vol.22, Iss.7, 1987-07, pp. : 613-621
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON BY THE S.T.E.B.I.C. METHOD
Le Journal de Physique Colloques, Vol. 50, Iss. C6, 1989-06 ,pp. :
STRUCTURAL AND ELECTRICAL EFFECTS OF DOPANT SEGREGATION TO SILICON GRAIN BOUNDARIES
Le Journal de Physique Colloques, Vol. 46, Iss. C4, 1985-04 ,pp. :
ELECTRICAL PROPERTIES OF GRAIN BOUNDARIES
Le Journal de Physique Colloques, Vol. 43, Iss. C6, 1982-12 ,pp. :