NUMERICAL ANALYSIS OF THE TEMPERATURE DEPENDENCE OF EBIC AND CL CONTRASTS

Publisher： Edp Sciences

E-ISSN： 1764-7177|01|C6|C6-23-C6-28

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.01, Iss.C6, 1991-12, pp. : C6-23-C6-28

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

TEMPERATURE DEPENDENCE OF CL AND EBIC IMAGES OF DISLOCATED GaAs AND Si

By  

Le Journal de Physique Colloques, Vol. 50, Iss. C6, 1989-06 ,pp. : C6-168-C6-168

Edp Sciences

Access to resources Recommend Favorite

PROBLEMS ASSOCIATED WITH MODELLING OF RECOMBINATION AT DEFECTS, TEMPERATURE DEPENDENCE OF EBIC AND CL

By  

Le Journal de Physique Colloques, Vol. 50, Iss. C6, 1989-06 ,pp. : C6-145-C6-150

Edp Sciences

Access to resources Recommend Favorite

DISCUSSION OF THE CONVERGENCE PROPERTIES OF THE PERTURBATION SERIES USED IN THE CALCULATION OF EBIC- AND CL-CONTRASTS

By  

Le Journal de Physique IV, Vol. 01, Iss. C6, 1991-12 ,pp. : C6-45-C6-50

Edp Sciences

Access to resources Recommend Favorite

RECENT RESULTS IN THE THEORETICAL DESCRIPTION OF CL AND EBIC DEFECT CONTRASTS

By  

Le Journal de Physique IV, Vol. 01, Iss. C6, 1991-12 ,pp. : C6-39-C6-44

Edp Sciences

Access to resources Recommend Favorite

On the temperature dependence of the EBIC contrast of dislocations in silicon

By  

Journal de Physique, Vol. 47, Iss. 2, 1986-02 ,pp. : 171-173

Edp Sciences

Access to resources Recommend Favorite