Temperature dependence of exciton-capture at impurities in GaAs/AlxGa(1-x) As quantum wells

Publisher: Edp Sciences

E-ISSN: 1764-7177|03|C5|C5-171-C5-174

ISSN: 1155-4339

Source: Le Journal de Physique IV, Vol.03, Iss.C5, 1993-10, pp. : C5-171-C5-174

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next