Resonant tunneling transport in Al z Ga1−z N/In x Ga1−x N/Al z Ga1−z N/In y Ga1−y N quantum structures

By Bhouri A   Rached A   Lazzari J-L  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 38, 2015-09 ,pp. : 385102-385110

IOP Publishing

Access to resources Recommend Favorite

Optimization the Performance of GaAs/Al x Ga 1- x As Based Resonant Tunnelling Diode Using Transfer Matrix Approach

By Souravroy   Biswas Somjita   Gupta Chatterjee Shyamasree   Chatterjee Somenath  

Quantum Matter, Vol. 2, Iss. 5, 2013-10 ,pp. : 341-352

American Scientific Publishers

Access to resources Recommend Favorite

The influence of growth patterns on the transmission properties of nonabrupt GaAs/Al x Ga 1- x As heterojunctions

By Filho J.R.   Farias G.A.   Freire V.N.  

Superlattices and Microstructures, Vol. 20, Iss. 2, 1995-02 ,pp. : 155-161

Academic Press

Access to resources Recommend Favorite

Electronic structures of the zinc-blende GaN/Ga 1- x Al x N compressively strained superlattices and quantum wells

By Fan W.J.   Li M.F.   Chong T.C.   Xia J.B.  

Superlattices and Microstructures, Vol. 19, Iss. 4, 1996-04 ,pp. : 251-261

Academic Press

Access to resources Recommend Favorite

Photoluminescence and dark current of p-doped InGaAs/Al x Ga 1- x As strained multiple quantum wells

By Zhang D.H.   Yoon S.F.   Radhakrishnan K.   Han Z.Y.  

Superlattices and Microstructures, Vol. 20, Iss. 1, 1996-01 ,pp. : 105-110

Academic Press

Access to resources Recommend Favorite