Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications

Publisher： Edp Sciences

E-ISSN： 1764-7177|03|C3|C3-441-C3-448

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.03, Iss.C3, 1993-08, pp. : C3-441-C3-448

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