Electron Injection into the Gate Oxide of MOS Structures at Liquid Nitrogen Temperature : Measurement and Simulation

E-ISSN： 1764-7177|06|C3|C3-19-C3-24

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.06, Iss.C3, 1996-04, pp. : C3-19-C3-24

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