MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

Publisher： Edp Sciences

E-ISSN： 1764-7177|09|PR8|Pr8-1163-Pr8-1169

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.09, Iss.PR8, 1999-09, pp. : Pr8-1163-Pr8-1169

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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