Related content

MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

By  

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-1163-Pr8-1169

Edp Sciences

Access to resources Recommend Favorite

Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

By Bin Niu   Yuan Wang   Wei Cheng   Zi-Li Xie   Hai-Yan Lu   Long Chang   Jun-Ling Xie  

Chinese Physics Letters, Vol. 32, Iss. 7, 2015-07 ,pp. : 77304-77307

IOP Publishing

Access to resources Recommend Favorite

Positive delayed photoconductivity in double heterostructures Al_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5As of the p-type

By Kraak W.   Minina N.   Savin A.   Ilievsky A.   Sorenson K.  

Technical Physics Letters, Vol. 28, Iss. 6, 2002-06 ,pp. : 527-529

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-579-C4-582

Edp Sciences

Access to resources Recommend Favorite

A systematic study of MOCVD grown InP/InGaAIAs heterojunction bipolar transistors with anomalous switching behavior

By  

Le Journal de Physique IV, Vol. 11, Iss. PR3, 2001-08 ,pp. : Pr3-957-Pr3-961

Edp Sciences

Access to resources Recommend Favorite