Growth of porous columnar α-GaN layers on c-plane Al2O3 by MOCVD using Bisazido dimethylaminopropyl gallium as single source precursor

Publisher： Edp Sciences

E-ISSN： 1764-7177|11|PR3|Pr3-683-Pr3-687

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.11, Iss.PR3, 2001-08, pp. : Pr3-683-Pr3-687

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