L.P.E. growth rate in Ga-As-Ge and Ga-As-Sn systems

Publisher: Edp Sciences

E-ISSN: 0035-1687|19|1|21-25

ISSN: 0035-1687

Source: Revue de Physique Appliquée (Paris), Vol.19, Iss.1, 1984-01, pp. : 21-25

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