Photocurrent and diffusion lengths at the vicinity of grain boundaries (g.b.) in N and P-type polysilicon. Evaluation of the g.b. recombination velocity)

Publisher： Edp Sciences

E-ISSN： 0035-1687|17|3|119-124

ISSN： 0035-1687

Source： Revue de Physique Appliquée (Paris), Vol.17, Iss.3, 1982-03, pp. : 119-124

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