Influence of the epilayer properties on breakdown voltage and noise behaviour of GaAs MESFETs

Publisher: Edp Sciences

E-ISSN: 0035-1687|13|12|761-765

ISSN: 0035-1687

Source: Revue de Physique Appliquée (Paris), Vol.13, Iss.12, 1978-12, pp. : 761-765

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