n-Type silicon at 77 K : hot carrier noise and not generation recombination noise

Publisher： Edp Sciences

E-ISSN： 0035-1687|13|12|715-717

ISSN： 0035-1687

Source： Revue de Physique Appliquée (Paris), Vol.13, Iss.12, 1978-12, pp. : 715-717

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