Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification

Publisher： Edp Sciences

E-ISSN： 0035-1687|24|3|295-308

ISSN： 0035-1687

Source： Revue de Physique Appliquée (Paris), Vol.24, Iss.3, 1989-03, pp. : 295-308

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