Influence of indium on the dissociation of dislocations in GaAs at high temperature

Publisher： Edp Sciences

E-ISSN： 0035-1687|23|3|251-255

ISSN： 0035-1687

Source： Revue de Physique Appliquée (Paris), Vol.23, Iss.3, 1988-03, pp. : 251-255

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