![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Publisher: Edp Sciences
E-ISSN: 0449-1947|44|C4|C4-207-C4-215
ISSN: 0449-1947
Source: Le Journal de Physique Colloques, Vol.44, Iss.C4, 1983-09, pp. : C4-207-C4-215
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
CAPACITANCE TRANSIENT SPECTROSCOPY (DLTS) OF EXTENDED DEFECTS IN SEMICONDUCTORS
Le Journal de Physique IV, Vol. 01, Iss. C6, 1991-12 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
OPTICAL DLTS MEASUREMENTS OF LOCALIZED STATES IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORS
Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Electron-hole avalanches in semiconductors
By Kyuregyan A.
Technical Physics Letters, Vol. 33, Iss. 7, 2007-07 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON
Le Journal de Physique Colloques, Vol. 44, Iss. C4, 1983-09 ,pp. :