CONDUCTIVITY MEASUREMENTS ON UHV DEPOSITED AMORPHOUS SILICON

E-ISSN： 0449-1947|42|C4|C4-151-C4-154

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.42, Iss.C4, 1981-10, pp. : C4-151-C4-154

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS SILICON FILMS

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-783-C4-786

Edp Sciences

Access to resources Recommend Favorite

Thermal Conductivity Measurements of Thin Insulating Layers Deposited on High-Conducting Sheets

By Gustavsson M. Hälldahl L.

International Journal of Thermophysics, Vol. 27, Iss. 1, 2006-01 ,pp. : 195-208

Springer Publishing Company

Access to resources Recommend Favorite

Amorphous Hydrogenated Silicon Nitride Deposited by Mercury Photosensitization Chemical Vapour Deposition for Optoelectronic Applications

Le Journal de Physique IV, Vol. 05, Iss. C5, 1995-06 ,pp. : C5-1149-C5-1155

Edp Sciences

Access to resources Recommend Favorite

Investigation of isochronal annealing on the optical properties of HWCVD amorphous silicon nitride deposited at low temperatures and low gas flow rates

Journal of Physics: Conference Series , Vol. 619, Iss. 1, 2015-06 ,pp. : 62-65

IOP Publishing

Access to resources Recommend Favorite

On the amorphous silicon on crystalline silicon heterojunctions

Revue de Physique Appliquée (Paris), Vol. 16, Iss. 2, 1981-02 ,pp. : 35-36

Edp Sciences

Access to resources Recommend Favorite