Related content

Raman Scattering Study of In_xGa_1−xN Alloys with Low Indium Compositions

By Long Teng   Rong Zhang   Zi-Li Xie   Tao Tao   Zhao Zhang   Ye-Cao Li   Bin Liu   Peng Chen   Ping Han   You-Dou Zheng  

Chinese Physics Letters, Vol. 29, Iss. 2, 2012-02 ,pp. : 27803-27805

IOP Publishing

Access to resources Recommend Favorite

Structure and gap of low-x (Ga1-xInx)2O3 alloys

By  

Journal of Physics: Conference Series , Vol. 566, Iss. 1, 2014-12 ,pp. : 87-90

IOP Publishing

Access to resources Recommend Favorite

Physics-based analysis of low frequency drain noise-current in Al_xGa_1−xN/GaN HFETs

By Manouchehri F   Valizadeh P   Kabir M Z  

Journal of Physics D: Applied Physics, Vol. 47, Iss. 8, 2014-02 ,pp. : 85104-85111

IOP Publishing

Access to resources Recommend Favorite

RAMAN STUDY OF THE ANHARMONICITY AND DISORDER-INDUCED EFFECTS IN Ga1-xAlxAs

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C6, 1981-12 ,pp. : C6-43-C6-45

Edp Sciences

Access to resources Recommend Favorite

Drift velocity of electrons in quantum wells of selectively doped In 0.5 Ga 0.5 As/Al x In 1 − x As and In 0.2 Ga 0.8 As/Al x Ga 1 − x As heterostructures in high electric fields

By Požela J.   Požela K.   Raguotis R.   Jucienė V.  

Semiconductors, Vol. 45, Iss. 6, 2011-06 ,pp. : 761-765

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite