MODELISATION DE TRANSISTORS MOS RÉALISÉS DANS DU SILICIUM POLYCRISTALLIN A GROS GRAINS

Publisher: Edp Sciences

E-ISSN: 0449-1947|43|C1|C1-381-C1-385

ISSN: 0449-1947

Source: Le Journal de Physique Colloques, Vol.43, Iss.C1, 1982-10, pp. : C1-381-C1-385

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next