LIGHT BEAM INDUCED CURRENT IMAGING OF THE ELECTRICAL ACTIVITY OF STACKING FAULTS IN CZ SILICON

Publisher： Edp Sciences

E-ISSN： 0449-1947|50|C6|C6-169-C6-169

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.50, Iss.C6, 1989-06, pp. : C6-169-C6-169

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