Publisher： Edp Sciences
E-ISSN： 0449-1947|51|C1|C1-457-C1-462
ISSN： 0449-1947
Source： Le Journal de Physique Colloques, Vol.51, Iss.C1, 1990-01, pp. : C1-457-C1-462
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
STUDY OF SOME OPTICAL AND ELECTRICAL PROPERTIES OF HEAVILY DOPED SILICON LAYERS
Le Journal de Physique Colloques, Vol. 44, Iss. C5, 1983-10 ,pp. :
Access to resources
Recommend
ELECTRONIC AND STRUCTURAL PROPERTIES OF GRAIN BOUNDARIES IN Cz-GROWN SILICON BICRYSTALS
Le Journal de Physique Colloques, Vol. 43, Iss. C1, 1982-10 ,pp. :
Czochralski growth of silicon bicrystals
Revue de Physique Appliquée (Paris), Vol. 22, Iss. 7, 1987-07 ,pp. :
PRECIPITATION OF COPPER IN SILICON BICRYSTALS
Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. :