TEM INVESTIGATION OF COPPER PRECIPITATION AT GRAIN BOUNDARIES IN SILICON

Publisher： Edp Sciences

E-ISSN： 0449-1947|51|C1|C1-197-C1-202

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.51, Iss.C1, 1990-01, pp. : C1-197-C1-202

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