Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions †

Author： Chang Chip-Hong   Liu Chao Qun   Zhang Le   Kong Zhi Hui  

Publisher： MDPI

E-ISSN： 2079-9268|6|3|16-16

ISSN： 2079-9268

Source： Journal of Low Power Electronics and Applications, Vol.6, Iss.3, 2016-08, pp. : 16-16

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