![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Zhao L. Normand A. Houard J. Blum I. Delaroche F. Vurpillot F.
Publisher: Edp Sciences
E-ISSN: 1286-4854|116|2|27002-27002
ISSN: 0295-5075
Source: EPL (EUROPHYSICS LETTERS), Vol.116, Iss.2, 2016-11, pp. : 27002-27002
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/o.png)
![](/images/ico/ico5.png)
![](/images/ico/o.png)
![](/images/ico/ico5.png)
Toward atom probe tomography of microelectronic devices
Journal of Physics: Conference Series , Vol. 326, Iss. 1, 2011-11 ,pp. :
![](/images/ico/o.png)
![](/images/ico/ico5.png)
Accuracy of pulsed laser atom probe tomography for compound semiconductor analysis
Journal of Physics: Conference Series , Vol. 326, Iss. 1, 2011-11 ,pp. :
![](/images/ico/o.png)
![](/images/ico/ico5.png)
A (S)TEM and atom probe tomography study of InGaN
Journal of Physics: Conference Series , Vol. 326, Iss. 1, 2011-11 ,pp. :