Physical property analysis of C-doped GaAs as function of thecarrier concentration grown by MOCVD using elemental arsenic asprecursor

Publisher： Edp Sciences

E-ISSN： 1764-7177|132|issue|291-294

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.132, Iss.issue, 2006-03, pp. : 291-294

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