Polarized photoluminescence of the of GaInP$_{2}$ layersgrown on GaAs and Ge substrates by MOVPE technique

E-ISSN： 1764-7177|132|issue|295-299

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.132, Iss.issue, 2006-03, pp. : 295-299

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