Effects of substrate nitridation time on the thermal properties of GaN films grown on silicon by molecular beam epitaxy

Publisher： Edp Sciences

E-ISSN： 1764-7177|125|issue|205-208

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.125, Iss.issue, 2005-06, pp. : 205-208

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