Author： Irokawa Yoshihiro
Publisher： MDPI
E-ISSN： 1424-8220|11|1|674-695
ISSN： 1424-8220
Source： Sensors, Vol.11, Iss.1, 2011-01, pp. : 674-695
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures
By Gu Haoshuang Wang Zhao Hu Yongming
Sensors, Vol. 12, Iss. 5, 2012-04 ,pp. :
Access to resources
Recommend
COMPUTER SIMULATION OF METAL-SEMICONDUCTOR AND SEMICONDUCTOR-SEMICONDUCTOR INTERFACES
Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. :
Access to resources
METAL-SEMICONDUCTOR (Si, GaAs) INTERFACES
Le Journal de Physique Colloques, Vol. 50, Iss. C8, 1989-11 ,pp. :
By El Barbri Noureddine Llobet Eduard El Bari Nezha Correig Xavier Bouchikhi Benachir
Sensors, Vol. 8, Iss. 1, 2008-01 ,pp. :