Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

Author： Sakic Agata   Scholtes Tom L. M.   Boer Wiebe de   Golshani Negin   Derakhshandeh Jaber   Nanver Lis K.  

Publisher： MDPI

E-ISSN： 1996-1944|4|12|2092-2107

ISSN： 1996-1944

Source： Materials, Vol.4, Iss.12, 2011-12, pp. : 2092-2107

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