Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices

Author: Zhao Yi  

Publisher: MDPI

E-ISSN: 1996-1944|5|8|1413-1438

ISSN: 1996-1944

Source: Materials, Vol.5, Iss.8, 2012-08, pp. : 1413-1438

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Abstract