Influence of the Localization of Ge Atoms within the Si(001)(4 × 2) Surface Layer on Semicore One-Electron States

Author： Tkachuk Olha I.   Terebinskaya Maria I.   Lobanov Victor V.   Arbuznikov Alexei V.  

Publisher： MDPI

E-ISSN： 2079-3197|4|1|14-14

ISSN： 2079-3197

Source： Computation, Vol.4, Iss.1, 2016-03, pp. : 14-14

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