Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2017|897|55-58
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 55-58
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
High Quality 100 mm 4H-SiC Substrate
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :