Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2017|897|711-714
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 711-714
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Abstract
AlN single crystals were prevented from cracking by simultaneous growth and evaporation of SiC substrates. The freestanding crystals (lt;1 mm thick) were proved continuous by synchrotron phase contrast imaging and used as a model system to investigate the type of dislocation structure near AlN/SiC interface by x-ray diffraction techniques. We have found that, unlike the situation in GaN films, where predominantly edge-type threading dislocations cross the layer along its normal, the dislocations configure to form mosaic structure. We suggest a theoretical model that describes the misfit stress relaxation in growing AlN crystal.
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