Combined N₂O and Phosphorus Passivations for the 4H-SiC/SiO₂ Interface with Oxide Grown at 1400°C

E-ISSN： 1662-9752|2017|897|344-347

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 344-347

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