V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2017|897|67-70

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 67-70

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Abstract

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